Photoluminescence study of annealing effects on CuI crystals grown by evaporation method

Crystal Research and Technology

Volumn 47, Issue 7, 2012, Pages 707-712

  Gao, Pan ^a   Gu, Mu ^b   Liu, Xi ^a   Zheng, Yan Qing ^a   Shi, Er Wei ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b Tongji University   (China)

Author keywords

Cuprous iodide crystals; Photolumiescence; Scintillator; Thermal Annealing

Indexed keywords

ANNEALING EFFECTS; CUPROUS IODIDE; DEFECT CONCENTRATIONS; EMISSION BANDS; EVAPORATION METHOD; EXCITATION SPECTRUM; LOW-INTENSITY; PEAK INTENSITY; PEAK POSITION; PHOTOLUMIESCENCE; RELATIVE PEAK INTENSITY; ROOM TEMPERATURE; SCINTILLATION CRYSTALS; THERMAL-ANNEALING; ULTRA-FAST;

PHOSPHORS; SCINTILLATION;

LUMINESCENCE;

EID: 84863643512     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201100621     Document Type: Article

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