Crystal growth and characterization of CuI single crystals by solvent evaporation technique

Materials Research Bulletin

Volumn 45, Issue 5, 2010, Pages 636-639

  Gu, Mu ^a   Gao, Pan ^a   Liu, Xiao Lin ^a   Huang, Shi Ming ^a   Liu, Bo ^a   Ni, Chen ^a   Xu, Rong Kun ^b   Ning, Jia min ^b  

^a Tongji University   (China)

^b RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

A. Halides; A. Semiconductors; B. Crystal growth; C. X ray diffraction; D. Luminescence

Indexed keywords

A. SEMICONDUCTORS; AS-GROWN CRYSTAL; B. CRYSTAL GROWTH; CUPROUS IODIDE; DIFFERENT SOLVENTS; ELECTRICAL CONDUCTIVITY; EMISSION BANDS; PEAK POSITION; PHOTOLUMINESCENCE SPECTRUM; PLATELET CRYSTALS; ROOM TEMPERATURE; SECONDARY PHASE; SLOW EVAPORATION; SOLVENT EVAPORATION TECHNIQUES; TWO PHASE; ULTRA VIOLET EXCITATION; ZINC-BLENDE;

ACETONITRILE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; ELECTRIC CONDUCTIVITY; EVAPORATION; GRAIN BOUNDARIES; LIGHT; LUMINESCENCE; MELTING POINT; ORGANIC SOLVENTS; PHASE TRANSITIONS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC;

SINGLE CRYSTALS;

EID: 77949271428     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2010.01.005     Document Type: Article

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