Studies on the energy band discontinuities in SnS/ZnMgO thin film heterojunction

Energy Procedia

Volumn 10, Issue , 2011, Pages 172-176

  Ramakrishna Reddy, K T ^a   Ramya, K ^a   Sreedevi, G ^a   Shimizu, T ^b   Murata, Y ^b   Sugiyama, M ^b  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Energy band discontinuity; Heterojunction; SnS ZnMgO; XPS

Indexed keywords

ABSORBER MATERIAL; ABSORPTION COEFFICIENTS; BAND EDGE; BAND OFFSETS; COATED GLASS; ENERGY BAND; ENERGY BANDGAPS; ENERGY-BAND DIAGRAM; RESEARCH GROUPS; RF-SPUTTERING; SNS FILMS; SNS/ZNMGO; SOLAR CELL FABRICATION; TIN SULFIDE; WINDOW LAYER; ZNO;

BAND STRUCTURE; GALLIUM; NANOSTRUCTURED MATERIALS; PHOTOVOLTAIC EFFECTS; SOLAR ABSORBERS; TIN; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84863414615     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.10.172     Document Type: Conference Paper

References (14)

1. Shalvoy RB, Fisher GB, Stiles PJ. Bondionicity and structural stability of some average valance five materials studied by Xray photoemission. Phys Rev B 15;1977, 1680-97.
2. Tanusevski A, Poelman D. Optical and photoconductive properties of SnS thin films prepared by electron beam evaporation. Sol. Energy Mater Sol Cells 80;2003, 297-303.
3. Chen JJ, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR et al. Determination of MgO/GaN heterojunction band offsets by X-ray photo electron spectroscopy. App Phys Lett 88; 2006, 042113 - 042113-3
4. Martin G, Botchkarev A, Rockett A, Morkoc H. Valance band discontinuities of wurtzite of GaN, AlN and InN heterojunctions measured by phot emission spectroscopy. Appl. Phys. Lett.68; 1996, 2541-3 (Pubitemid 126683969)
5. Ramakrishna Reddy KT, Prathap P, Miles RW, Thin sulphide films for solar photovoltaic application. In: Eds. Tanaka H, Yamashita K, Photovoltaics: Developments, Applications and Impact, New York: Nova Science Publishers Inc; 2010, p. 1-27.
6. Ichimura M, Calculation of band offsets at the CdS/SnS heterojunction. Sol Enegy Mater Sol Cells, 93; 2009, 375-378.
7. Sugiyama M, Reddy KTR, Revathi N, Shimamoto Y, Murata Y, Band offset of SnS solar cell structure measured by X-ray photoelectron spectorscopy. Thin Solid Films, 2010, doi:10.1016/j.tsf.2010.12.133
8. Devika M, Reddy NK, Ramesh K, Ganesan P, Gopal ESR, Reddy KTR. Influence of annealing on physical properties of evaporated SnS films. Semicond. Sci Technol 21;2006, 1125-31. (Pubitemid 44458358)
9. Sugiyama M, Miyauchi K, Minemura T, Ohtsuka K, Noguchi K, Nakanishi H, Preparation of SnS films by sulfurization of Sn sheet, Jpn J Appl Phys, 47; 2008, 4494-95.
10. Ramakrishna Reddy KT, Reddy PP, Datta PK, Miles RW, Formation of polycrystalline SnS layers by a two-step process. Thin Solid Films, 403-404; 2002, 116-19. (Pubitemid 34100333)
11. Minemura T, Miyauchi K, Noguchi K, Ohtsuka K, Nakanishi H, Sugiyama M, Preparation of SnS films by low temperature sulfurization. Phys Stat Sol C, 6; 2009, 122-24.
12. Wilke W, Maiehofer, Horn K, Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well. J Vac Sci Technol B 8; 1990, 760-68.
13. 2 solar cells. Appl Phys Lett 85; 2004, 5607-10.
14. Sugiyama, M, Nakanishi H, Chichibu SF, Experimental determination of valence band discontinuties at Cu(Al,Ga)(S,Se)2/ GaAs heterointerfaces using ultraviolet photoemission spectroscopy. Jpn J Appl Phys 40; 2001, L428-430. (Pubitemid 32639019)