Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 546-549

  Amari, Houari ^a   Ross, Ian M ^a   Wang, Tao ^a   Walther, Thomas ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

EDX; EELS; Gallium nitrides; InGaN; TEM

Indexed keywords

ABERRATION-CORRECTED; CHEMICAL VAPOUR DEPOSITION; ELEMENTAL COMPOSITIONS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; FIELD EMISSION GUNS; INDIUM CONCENTRATION; INGAN; INGAN/GAN; INTERFACE QUALITY; METAL-ORGANIC; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TEM/STEM;

ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; ORGANIC CHEMICALS; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH;

EID: 84863371612     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100500     Document Type: Article

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