Doping effects on internally coupled seebeck coefficient, electrical, and thermal conductivities in aluminum-doped TiO 2

Journal of Physical Chemistry C

Volumn 116, Issue 24, 2012, Pages 13020-13025

  Xu, Ling ^a   Garrett, Matthew P ^a   Hu, Bin ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b University of Tennessee   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPING; CHARGE DIFFUSION; CRITICAL PARAMETER; DOPING CONCENTRATION; DOPING EFFECTS; ELECTRICAL CONDUCTIVITY; GRAIN BOUNDARY INTERFACE; HIGH TEMPERATURE; MAXIMAL FIGURE OF MERIT; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; TIO; Z VALUE;

ALUMINUM; ELECTRIC CONDUCTIVITY; ENTROPY; GRAIN BOUNDARIES; LATTICE CONSTANTS; PHONON SCATTERING; THERMOELECTRIC EQUIPMENT; TITANIUM DIOXIDE;

THERMAL CONDUCTIVITY;

EID: 84863311414     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp302652c     Document Type: Article

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