Electron-dependent thermoelectric properties in Si/Si 1- xGe x heterostructures and Si 1- xGe x alloys from first-principles

Applied Physics Letters

Volumn 100, Issue 25, 2012, Pages

  Hossain, M Z ^a   Johnson, H T ^b  

^a California Institute of Technology   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL VARIATION; CRYSTALLINE SI; ELECTRICAL CONDUCTIVITY; ELECTRON THERMAL CONDUCTIVITY; LORENZ NUMBER; MINIBANDS; THERMOELECTRIC PROPERTIES;

ELECTRIC CONDUCTIVITY; SILICON; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER;

GERMANIUM;

EID: 84863311032     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729765     Document Type: Article

References (29)

1. G. D. Mahan and J. O. Sofo, Proc. Natl. Acad. Sci. U.S.A. 93, 7436 (1996). 10.1073/pnas.93.15.7436
2. F. J. DiSalvo, Science 285, 703 (1999). 10.1126/science.285.5428.703
3. A. Majumder, Science 303, 777 (2004). 10.1126/science.1093164
4. G. J. Snyder and E. S. Toberer, Nature Mater 7, 105 (2008). 10.1038/nmat2090
5. D. G. Cahill, W. K. Ford, K. E. Goodson, G. D. Mahan, A. Majumdar, H. J. Maris, R. Merlin, and S. R. Phillpot, J. Appl. Phys. 93, 793 (2003). 10.1063/1.1524305
6. A. I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J. K. Yu, W. A. Goddard III, and J. R. Heath, Nature 451, 168 (2008). 10.1038/nature06458
7. D. Li, S. T. Huxtable, A. R. Abramson, and A. Majumdar, J. Heat Transfer 127, 108 (2005). 10.1115/1.1839588
8. X. W. Wang, H. Lee, Y. C. Lan, G. H. Zhu, G. Joshi, D. Z. Wang, J. Yang, A. J. Muto, M. Y. Tang, J. Klatsky, S. Song, M. S. Dresselhaus, G. Chen, and Z. F. Ren, Appl. Phys. Lett. 93, 193121 (2008). 10.1063/1.3027060
9. A. Ishida, D. Cao, S. Morioka, M. Veis, Y. Inoue, and T. Kita, Appl. Phys. Lett. 92, 182105 (2008). 10.1063/1.2917482
10. J.-H. Lee, J. Wu, and J. C. Grossman, Phys. Rev. Lett. 104, 016602 (2010). 10.1103/PhysRevLett.104.016602
11. C. Jeong, R. Kim, M. Luisier, S. Datta, and M. Lundstrom, J. Appl. Phys. 107, 023707 (2010). 10.1063/1.3291120
12. P. Pichanusakorn and P. R. Bandaru, Appl. Phys. Lett. 94, 223108 (2009). 10.1063/1.3147186
13. Z. Bian, M. Zebarjadi, R. Singh, Y. Ezzahri, A. Shakouri, G. Zeng, J. H. Bahk, J. Bowers, J. Zide, and A. Gossard, Phys. Rev. B 76, 205311 (2007). 10.1103/PhysRevB.76.205311
14. D. Vashaee, Y. Zhang, A. Shakouri, G. Zeng, and Y.-L. Chiu, Phys. Rev. B 74, 195315 (2006). 10.1103/PhysRevB.74.195315
15. L. W. Whitlow and T. Hirano, J. Appl. Phys. 78, 5460 (1995). 10.1063/1.359661
16. Z. Tao and L. Friedman, J. Phys. C 18, L455 (1985). 10.1088/0022-3719/18/ 16/003
17. K. Ahn, E. Cho, J.-S. Rhyee, S. Il Kim, S. M. Lee, and K. H. Lee, Appl. Phys. Lett. 99, 102110 (2011). 10.1063/1.3637053
18. D. Bilc and P. Ghosez, Phys. Rev. B 83, 205204 (2011). 10.1103/PhysRevB.83.205204
19. Y. Zhang, X. Ke, C. Chen, J. Yang, and P. Kent, Phys. Rev. Lett. 106, 206601 (2011). 10.1103/PhysRevLett.106.206601
20. J. M. Soler, E. Artacho, J. D. Gale, A. Garcia, J. Junquera, P. Ordejon, and D. Sanchez-Portal, J. Phys.: Condens. Matter 14, 2745 (2002). 10.1088/0953-8984/14/11/302
21. G. K. H. Madsen and D. J. Singh, Comput. Phys. Commun. 175 (1), 67 (2006). 10.1016/j.cpc.2006.03.007
22. R. People, Phys. Rev. B 32, 1405 (1985). 10.1103/PhysRevB.32.1405
23. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Saunders College Publishing, 1976).
24. G. S. Kumar, G. Prasad, and R. O. Pohl, J. Mater. Sci. 28, 4261 (1993). 10.1007/BF01154931
25. M. Peressi, N. Binggeli, and A. Baldereschi, J. Phys. D: App. Phys. 31, 1273 (1998). 10.1088/0022-3727/31/11/002
26. S. S. Li, Semiconductor Physical Electronics (Springer, 2006).
27. R. T. Tung, Mater. Sci. Eng. R 35, 1 (2001). 10.1016/S0927-796X(01)00037- 7
28. A. Baldereschi, S. Baroni, and R. Resta, Phys. Rev. Lett. 8, 734 (1988). 10.1103/PhysRevLett.61.734
29. A. Stroppa and M. Peressi, Phys. Rev. B 71, 205303 (2005). 10.1103/PhysRevB.71.205303