Tunable dielectric properties in Mn-doped LuFe 2O 4 system

Journal of Materials Research

Volumn 27, Issue 6, 2012, Pages 922-927

  Hou, Ying ^a,b,c   Yao, Yiping ^a,b   Dong, Sining ^a,b   Huang, Xi ^a,b   Sun, Xuefeng ^a,b   Li, Xiaoguang ^a,b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

^c EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

dielectric properties

Indexed keywords

BULK EFFECT; DIELECTRIC TUNABILITY; ELECTRON TRANSFER; EXTRINSIC EFFECTS; MN-DOPED; MN-DOPING; MODULUS COMPLEXES; ROOM TEMPERATURE; TUNABILITIES; TUNABLE DIELECTRIC PROPERTIES;

DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; ELECTRIC FIELDS;

MANGANESE;

EID: 84863261695     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.446     Document Type: Article

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