Visible luminescence mechanism of ZnO nanoparticles synthesized by sol-gel method

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 11, 2011, Pages 9415-9420

  Chen, X L ^a   Xu, C S ^a   Liu, Y X ^a   Liang, S L ^a   Qiao, H Q ^a   Xu, H T ^a   Ning, Y H ^a   Liu, Y C ^a  

^a NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

Effective mass theory; Visible luminescence mechanism; ZnO nanoparticles

Indexed keywords

ACCEPTOR LEVELS; BLUE EMISSION; BLUE EMISSION BANDS; DEEP LEVEL; DIFFERENT SIZES; EFFECTIVE-MASS THEORY; EMISSION BANDS; EMISSION PROPERTIES; EMISSION SPECTRUMS; GREEN EMISSION BANDS; GREEN LUMINESCENCE; LINEAR DEPENDENCE; LINEAR RELATIONSHIPS; LOWER ENERGIES; NANOCRYSTALLINE ZNO; PL SPECTRA; RECOMBINATION PROCESS; ROOM TEMPERATURE; SIZE-DEPENDENCY; TRAPPED ELECTRONS; ULTRA-VIOLET; UV- AND; VISIBLE BAND; VISIBLE EMISSIONS; VISIBLE LUMINESCENCE; ZNO; ZNO NANOPARTICLES;

EMISSION SPECTROSCOPY; NANOPARTICLES; SOL-GEL PROCESS; ZINC OXIDE;

LUMINESCENCE;

EID: 84863173025     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.5290     Document Type: Article

References (30)

1. K. Hummer, Phys. Stat. Sol. 56, 249 (1973).
2. D. C. Look, Mater. Sci. Eng. B 80, 383 (2001).
3. E. Olsson, G. Dunlop, and R. Osterlund, J. Am. Ceram. Soc. 76, 65 (1993).
4. T. N. Rao and L. Bahadur, J. Electrochem. Soc. 144, 179 (1997).
5. S. Sakohara, L. D. Tickanen, and M. A. Anderson, J. Phys. Chem. 96, 11086 (1992).
6. W. Chen, J. Nanosci. Nanotechnol. 8, 1019 (2008).
7. W. Chen and J. Zhang, J. Nanosci. Nanotechnnol. 6, 1159 (2006).
8. Y. Liu, Y. Zhang, S. Wang, C. Pope, and W. Chen, Appl. Phys. Lett. 92, 143901 (2008).
9. R. Dingle, Phys. Rev. Lett. 23, 579 (1969).
10. I. J. Broser, R. K. F. Germer, H.-J. E. Schulz, and K. P. Wisznewski, Solid-State Electron. 21, 1579 (1978).
11. R. Kuhnert and R. Helbig, J. Lumin. 26, 203 (1981).
12. P. Dahan, V. Fleurov, P. Thurian, R. Heitz, A. Hoffmann, and I. Broser, J. Phys.: Condens. Matter 10, 2007 (1998).
13. N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, Appl. Phys. Lett. 81, 622 (2002).
14. F. H. Su, Y. F. Liu, W. Chen, W. J. Wang, K. Ding, and G. H. Li, J. Appl. Phys. 100, 013107 (2006).
15. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403 (1996).
16. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996).
17. S. B. Zhang, S. H. Wei, and A. Zunger, Phys. Rev. B 63, 075205 (2001).
18. B. Q. Cao, W. P. Cai, and H. B. Zeng, Appl. Phys. Lett. 68, 161101 (2006).
19. Vlasenko and Watkins, Phys. Rev. B 71, 125210 (2005).
20. A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, Phys. Rev. B 61, 15019 (2000).
21. L. J. Brus, Phys. Chem. 90, 2555 (1986).
22. A. Van Dijken, E. A. Meulenkamp, and D. Vanmaekelbergh, J. Phys. Chem. B 104, 1715 (2000).
23. A. Van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Medijerink, J. Lumin. 90, 123 (2000).
24. A. Van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, J. Lumin. 87-89, 454 (2000).
25. S. Sakohara, M. Ishida, and M. A. Anderson, J. Phys. Chem. B 102, 10169 (1998).
26. D. W. Bahnemann, C. Kormann, and M. Hoffmann, J. Phys. Chem. 91, 3789 (1987).
27. L. Spahel and M. A. Anderson, J. Am. Chem. Soc. 113, 2826 (1991).
28. P. V. Kamat and B. Patrick, J. Phys. Chem. 96, 6829 (1992).
29. O. Madelung (ed.), Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, Semiconductors, Springer, Berlin (1998), Vol. III-17b, pp. 35-115.
30. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Prog. Mater. Sci. 50, 293 (2005).