Different temperature dependence of excitonic and defect-related photoluminescence spectra in ZnS nanobelts and nanowires

Journal of Physics D: Applied Physics

Volumn 45, Issue 9, 2012, Pages

  Wang, H Y ^a   Wang, C R ^a   Xu, J ^a   Liu, X ^a   Xu, X F ^a   Xing, H Z ^a   Zhao, L J ^a   Chen, X S ^b  

^a DONGHUA UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EMISSION; BOUND EXCITON; DONOR-ACCEPTOR PAIRS; EMISSION BANDS; EMPIRICAL RELATIONS; FREE EXCITONS; HIGH QUALITY CRYSTALS; LO PHONONS; LONGITUDINAL OPTICAL PHONONS; PEAK POSITION; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; RECOMBINATION MECHANISMS; RELATIVE INTENSITY; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; ULTRA-VIOLET; UV EMISSIONS; VISIBLE EMISSIONS;

DEFECTS; NANOWIRES; PHONONS; PHOTOLUMINESCENCE; TEMPERATURE DISTRIBUTION; ZINC SULFIDE;

NANOBELTS;

EID: 84863164673     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/9/095301     Document Type: Article

References (35)

1. Fang X S, Gautam U K, Bando Y, Dierre B, Sekiguchi T and Golberg D 2008 J. Phys. Chem. C 112 473542
2. Fang X S, Bando Y, Ye C H, Shen G Z and Golberg D 2007 J. Phys. Chem. C 111 846974
3. Shen G Z, Bando Y, Golberg D and Zhou C W 2008 J. Phys. Chem. C 112 12299303
4. McCaldin J O, Wang M W and McGill T C 1996 J. Cryst. Growth. 159 5025
5. Bandic Z Z, Piquette E C, McCaldin J O and McGill T C 1998 Appl. Phys. Lett. 72 28624
6. Yokogawa T and Narusawa T 1992 Appl. Phys. Lett. 61 2913
7. Fang X S et al 2009 Adv. Mater. 21 20349
8. Xia Y N, Yang P D, Sun Y G, Wu Y Y, Mayers B, Gates B, Yin Y D, Kim F and Yan H 2003 Adv. Mater. 15 35389
9. Yao W T, Yu S H, Pan L, Li J, Wu Q S, Zhang L and Jiang J 2005 Small 1 3205
10. Shi L, Xu Y and Li Q 2009 Cryst. Growth Des. 9 22149
11. Yao W T, Yu S H and Wu Q S 2007 Adv. Funct. Mater. 17 62331
12. Chai L L, Du J, Xiong S L, Li H B, Zhu Y C and Qian Y T 2007 J. Phys. Chem. C 111 1265862
13. Zhang Y, Liang X H and Li L C 2010 Mater. Lett. 64 15213
14. Kar S and Chaudhuri S 2005 J. Phys. Chem. B 109 3298302
15. Wang Y W, Zhang L D, Liang C G, Wang G Z and Peng X S 2002 Chem. Phys. Lett. 357 3148
16. Hu P A, Liu Y Q, Fu L, Cao L C and Zhu D B 2004 J. Phys. Chem. B 108 9368
17. Li Q and Wang C R 2003 Appl. Phys. Lett. 83 35961
18. Do V N, Tuan N T, Trung D Q, Kien N D T, Chien N D and Huy P T 2010 Mater. Lett. 64 16502
19. Cheng B C and Wang Z G 2005 Adv. Funct. Mater. 15 188390
20. Zhang D B, Qi L M, Cheng H M and Ma J M 2002 J. Colloid Interface Sci. 246 4136
21. Lin D D, Wu H, Zhang R and Pan W 2007 J. Am. Ceram. Soc. 90 36646
22. Jiang X C, Xie Y, Lu J, Zhu L Y, He W and Qian Y T 2001 Chem. Mater. 13 12138
23. Chen W, Su F H, Li G H, Joly A G, Malm J O and Bovin J O 2002 J. Appl. Phys. 92 19505
24. Jiang Y, Zhang W J, Jie J S, Meng X M, Zapien J A and Lee S T 2006 Adv. Mater. 18 152732
25. Chen R, Li D H, Liu B, Peng Z P, Gurzadyan G G, Xiong Q H and Sun H D 2010 Nano. Lett. 10 495661
26. Liem N Q, Quang V X, Thanh D X, Lee J I and Kim D 2001 Solid State Commun. 117 2559
27. Que W X et al 1998 Appl. Phys. Lett. 73 27279
28. Mo M S, Zeng J H, Liu X M, Yu W C, Zhang S Y and Qian Y T 2002 Adv. Mater. 14 165862
29. Nakamura S, Sakashita T, Yamada Y and Taguchi T 1998 J. Cryst. Growth 184/185 11103
30. Liu J, Wang C R, Xie Q Q, Cai J S and Zhang J 2010 Nanoscale. Res. Lett. 5 2316
31. Tran T K, Park W, Tong W, Kyi M M, Wagner B K and Summers C J 1997 J. Appl. Phys. 81 28039
32. Riehl N 1981 J. Lumin. 24/25 33542
33. Klingshirn C 2007 Semiconductor Optics (Berlin: Springer) pp 2427
34. Varshni Y P 1967 Physica 34 14954
35. Yu Y M, Nam S G, Lee K S, Choi Y D and O B 2001 J. Appl. Phys. 90 80712