Energy band engineering and controlled p-type conductivity of CuAlO 2 thin films by nonisovalent Cu-O alloying

Applied Physics Letters

Volumn 100, Issue 6, 2012, Pages

  Yao, Z Q ^a,b   He, B ^a   Zhang, L ^b   Zhuang, C Q ^b   Ng, T W ^a   Liu, S L ^c   Vogel, M ^b   Kumar, A ^b   Zhang, W J ^a   Lee, C S ^a   Lee, S T ^a   Jiang, X ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF SIEGEN   (Germany)

^c SICHUAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ELECTRONIC BAND STRUCTURE; ENERGY BAND; ENERGY BAND ENGINEERING; FIELD-EFFECT MOBILITIES; HALL MEASUREMENTS; ORBITALS; P-TYPE CONDUCTIVITY; PARTIAL SUBSTITUTION; SYNERGISTIC EFFECT; TOP-GATE; VALENCE-BAND MAXIMUMS;

ALLOYING; BAND STRUCTURE; ELECTRONIC PROPERTIES; THIN FILM TRANSISTORS; THIN FILMS;

COPPER;

EID: 84863158641     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3683499     Document Type: Article

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