Tapered active-region quantum cascade lasers (λ=4.8 μm) for virtual suppression of carrier-leakage currents

Electronics Letters

Volumn 48, Issue 4, 2012, Pages 234-235

  Kirch, J D ^a   Shin, J C ^a   Chang, C C ^a   Mawst, L J ^a   Botez, D ^a   Earles, T ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Intraband LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BARRIER LAYERS; CARRIER LEAKAGE; CHARACTERISTIC TEMPERATURE; CONDUCTION BAND EDGE; INJECTION BARRIERS; SLOPE EFFICIENCIES;

LEAKAGE CURRENTS;

QUANTUM CASCADE LASERS;

EID: 84863132358     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2012.0017     Document Type: Article

References (9)

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