Enhancement technologies and physical understanding of electron mobility in III-V n-MOSFETs with strain and MOS interface buffer engineering

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Kim, S H ^a   Yokoyama, M ^a   Taoka, N ^a   Nakane, R ^a   Yasuda, T ^b   Ichikawa, O ^c   Fukuhara, N ^c   Hata, M ^c   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER ENGINEERING; CHANNEL STRAIN; DIRECT WAFER BONDING; INAS; MOBILITY ENHANCEMENT; MOS INTERFACE; MOSFETS; NMOSFETS; PEAK MOBILITY; SCATTERING MECHANISMS; SI SUBSTRATES; THIN BODY;

ELECTRON DEVICES; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; INDIUM ARSENIDE; INTERFACES (MATERIALS); SEMICONDUCTING SILICON;

MOSFET DEVICES;

EID: 84863068566     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131546     Document Type: Conference Paper

References (9)

1. H. J. Oh et al., IEDM (2009) p. 339
2. Y. Q. Wu et al., IEDM (2009) p. 323
3. S. Suthram et al., Symp.VLSI tech. (2008) p. 182
4. H.-C. Chin et al., Symp.VLSI tech. (2009) p. 244
5. Yokoyama et al., IEDM (2010) p. 46
6. S. H. Kim et al., Symp.VLSI tech. (2011) p. 58
7. S. Takagi et al., JJAP 37 (1998) p. 1289
8. K. Uchida et al., APL 82 (2003) p. 2916
9. N. Taoka et al., IEDM (2011) 27.2