Impurity doping into Mg 2Sn: A first-principles study

Physica B: Condensed Matter

Volumn 407, Issue 17, 2012, Pages 3493-3498

  Tani, Jun Ichi ^a   Kido, Hiroyasu ^a  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

Density functional theory; Electrical transport; Impurities in semiconductors; Intermetallics; Mg 2Sn; Thermoelectric materials

Indexed keywords

ELECTRICAL TRANSPORT; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; GA-DOPED; IMPURITIES IN; IMPURITIES IN SEMI CONDUCTORS; IMPURITY ATOMS; IMPURITY DOPING; N-TYPE DOPANTS; P-TYPE DOPANT; PLANE WAVE; SECOND-NEAREST-NEIGHBOR; SUPER CELL; THERMOELECTRIC MATERIAL; TOTAL ENERGY CALCULATION;

ANTIMONY; ATOMS; BISMUTH; CALCULATIONS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM; GOLD; IMPURITIES; INTERMETALLICS; LANTHANUM; RUBIDIUM; SODIUM; THERMOELECTRICITY;

TIN;

EID: 84863009062     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2012.05.008     Document Type: Article

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