-
1
-
-
60449098701
-
Pentacene thin film transistors with a poly(methyl methacrylate) gate dielectric: Optimization of device performance
-
10.1063/1.3075616 0021-8979
-
Yun, Y., Pearson, C., and Petty, M.C.: ' Pentacene thin film transistors with a poly(methyl methacrylate) gate dielectric: optimization of device performance ', J. Appl. Phys., 2009, 105, p. 034508 10.1063/1.3075616 0021-8979
-
(2009)
J. Appl. Phys.
, vol.105
, pp. 034508
-
-
Yun, Y.1
Pearson, C.2
Petty, M.C.3
-
2
-
-
0000061327
-
A reduced complexity process for organic thin film transistors
-
10.1063/1.126138 0003-6951
-
Klauk, H., Gundlach, D.J., Bonse, M., Kuo, C.C., and Jackson, T.N.: ' A reduced complexity process for organic thin film transistors ', Appl. Phys. Lett., 2000, 76, p. 1692 10.1063/1.126138 0003-6951
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 1692
-
-
Klauk, H.1
Gundlach, D.J.2
Bonse, M.3
Kuo, C.C.4
Jackson, T.N.5
-
3
-
-
0031207689
-
Pentacene-based thin film transistors
-
0018-9383
-
Lin, Y.Y., Gundlach, D.J., Nelson, S.F., and Jackson, T.N.: ' Pentacene-based thin film transistors ', IEEE Trans. Electron Devices, 1997, 44, p. 1331 0018-9383
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 1331
-
-
Lin, Y.Y.1
Gundlach, D.J.2
Nelson, S.F.3
Jackson, T.N.4
-
4
-
-
18744383136
-
High-mobility polymer gate dielectric pentacene thin film transistors
-
DOI 10.1063/1.1511826
-
Klauk, H., Halik, M., Zschieschang, U., Schmid, G., and Radlik, W.: ' High-mobility polymer gate dielectric pentacene thin film transistors ', J. Appl. Phys., 2002, 92, p. 5259 10.1063/1.1511826 0021-8979 (Pubitemid 35360721)
-
(2002)
Journal of Applied Physics
, vol.92
, Issue.9
, pp. 5259
-
-
Klauk, H.1
Halik, M.2
Zschieschang, U.3
Schmid, G.4
Radlik, W.5
Weber, W.6
-
5
-
-
0032672026
-
Fast organic thin-film transistor circuits
-
10.1109/55.767101 0741-3106
-
Klauk, H., and Jackson, T.N.: ' Fast organic thin-film transistor circuits ', IEEE Electron Device Lett., 1999, 20, p. 289 10.1109/55.767101 0741-3106
-
(1999)
IEEE Electron Device Lett.
, vol.20
, pp. 289
-
-
Klauk, H.1
Jackson, T.N.2
-
6
-
-
0038307224
-
Pentacene-based radio frequency identification circuitry
-
10.1063/1.1579554 0003-6951
-
Baude, P.F., Ender, D.A., Haase, M.A., Kelley, T.W., Muyres, D.V., and Theiss, S.D.: ' Pentacene-based radio frequency identification circuitry ', Appl. Phys. Lett., 2003, 82, p. 3964 10.1063/1.1579554 0003-6951
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 3964
-
-
Baude, P.F.1
Ender, D.A.2
Haase, M.A.3
Kelley, T.W.4
Muyres, D.V.5
Theiss, S.D.6
-
7
-
-
13844309960
-
The electrical characteristics of pentacene-based organic field-effect transistors with polymer gate insulators
-
10.1016/j.ca2004.02.012
-
Kanga, G.-W., Parka, K.-M., Songa, J.-H., Lee, C.H., and Hwang, D.H.: ' The electrical characteristics of pentacene-based organic field-effect transistors with polymer gate insulators ', Curr. Appl. Phys., 2005, 5, p. 297 10.1016/j.cap.2004.02.012
-
(2005)
Curr. Appl. Phys.
, vol.5
, pp. 297
-
-
Kanga, G.-W.1
Parka, K.-M.2
Songa, J.-H.3
Lee, C.H.4
Hwang, D.H.5
-
8
-
-
34248592614
-
Hysteresis of pentacene thin-film transistors and inverters with cross-linked poly(4-vinylphenol) gate dielectrics
-
DOI 10.1063/1.2733626
-
Lim, S.C., Kim, S.H., and Koo, L.B.: et al. ' Hysteresis of pentacene thin-film transistors and inverters with cross-linked poly(4vinylphenol) gate dielectrics ', Appl. Phys. Lett., 2007, 90, p. 173512 10.1063/1.2733626 0003-6951 (Pubitemid 46748419)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.17
, pp. 173512
-
-
Lim, S.C.1
Kim, S.H.2
Koo, J.B.3
Lee, J.H.4
Ku, C.H.5
Yang, Y.S.6
Zyung, T.7
-
9
-
-
43349108498
-
Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate) gate dielectrics
-
DOI 10.1063/1.2924772
-
Kim, S.H., Jang, J.Y., Jeon, H.Y., Yun, W.M., Nam, S.J., and Park, C.E.: ' Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate gate dielectrics ', Appl. Phys. Lett., 2008, 92, p. 183306 10.1063/1.2924772 0003-6951 (Pubitemid 351662045)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.18
, pp. 183306
-
-
Kim, S.H.1
Jang, J.2
Jeon, H.3
Yun, W.M.4
Nam, S.5
Park, C.E.6
-
10
-
-
44949142892
-
Pentacene-zinc oxide vertical diode with compatible grains and 15-MHz rectification
-
10.1002/adma.200701550 0935-9648
-
Pal, B.N., Sun, J., Jung, B.J., Choi, E., Andreou, A.G., and Katz, H.E.: ' Pentacene-zinc oxide vertical diode with compatible grains and 15-MHz rectification ', Adv. Mater., 2008, 20, p. 1023 10.1002/adma.200701550 0935-9648
-
(2008)
Adv. Mater.
, vol.20
, pp. 1023
-
-
Pal, B.N.1
Sun, J.2
Jung, B.J.3
Choi, E.4
Andreou, A.G.5
Katz, H.E.6
-
11
-
-
33745263960
-
Comparison of organic diode structures regarding high-frequency rectification behavior in radio-frequency identification tags
-
DOI 10.1063/1.2202243
-
Steudel, S., Vusser, S.D., Myny, K., Lenes, M., Genoe, J., and Heremans, P.: ' Comparison of organic diode structures regarding high-frequency rectification behavior in radio-frequency identification tags ', J. Appl. Phys., 2006, 99, p. 114519 10.1063/1.2202243 0021-8979 (Pubitemid 43926548)
-
(2006)
Journal of Applied Physics
, vol.99
, Issue.11
, pp. 114519
-
-
Steudel, S.1
De Vusser, S.2
Myny, K.3
Lenes, M.4
Genoe, J.5
Heremans, P.6
-
12
-
-
0035367077
-
High-performance bottom electrode organic thin-film transistors
-
DOI 10.1109/16.925226, PII S0018938301042137
-
Kymissis, I., and Purushothaman, S.: ' High-performance bottom electrode organic thin-film transistor ', IEEE Trans. Electron Devices, 2001, 48, p. 1060 10.1109/16.925226 0018-9383 (Pubitemid 32576935)
-
(2001)
IEEE Transactions on Electron Devices
, vol.48
, Issue.6
, pp. 1060-1064
-
-
Kymissis, I.1
Dimitrakopoulos, C.D.2
Purushothaman, S.3
-
13
-
-
73349086857
-
Structural analysis on organic thin-film transistor with device simulation
-
10.1109/TED.2009.2035540 0018-9383
-
Shim, C.H., Maruoka, F., and Hattori, R.: ' Structural analysis on organic thin-film transistor with device simulation ', IEEE Trans. Electron Devices, 2010, 57, p. 195 10.1109/TED.2009.2035540 0018-9383
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, pp. 195
-
-
Shim, C.H.1
Maruoka, F.2
Hattori, R.3
-
14
-
-
51349095516
-
An integrated double half-wave organic Schottky diode rectifier on foil operating at 13.56MHz
-
10.1063/1.2978348 0003-6951
-
Myny, K., Steudel, S., Vicca, P., Genoe, J., and Heremans, P.: ' An integrated double half-wave organic Schottky diode rectifier on foil operating at 13.56MHz ', Appl. Phys. Lett., 2008, 93, p. 093305 10.1063/1.2978348 0003-6951
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 093305
-
-
Myny, K.1
Steudel, S.2
Vicca, P.3
Genoe, J.4
Heremans, P.5
-
15
-
-
33645550736
-
Radio frequency rectifiers based on organic thin-film transistors
-
10.1063/1.2186384 0003-6951
-
Rotzoll, R., Mohapatra, S., Olariu, V., Wenz, R., Grigas, M., and Dimmler, K.: ' Radio frequency rectifiers based on organic thin-film transistors ', Appl. Phys. Lett., 2006, 88, p. 123502 10.1063/1.2186384 0003-6951
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 123502
-
-
Rotzoll, R.1
Mohapatra, S.2
Olariu, V.3
Wenz, R.4
Grigas, M.5
Dimmler, K.6
-
16
-
-
33846046981
-
Hysteresis mechanism in pentacene thin-film transistors with poly(4-vinyl phenol) gate insulator
-
DOI 10.1063/1.2425042
-
Lee, C.A., Park, D.W., and Jung, K.D.: et al. ' Hysteresis mechanism in pentacene thin-film transistors with poly(4-vinyl phenol) gate insulator ', Appl. Phys. Lett., 2006, 89, p. 262120 10.1063/1.2425042 0003-6951 (Pubitemid 46058033)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.26
, pp. 262120
-
-
Lee, C.A.1
Park, D.-W.2
Jung, K.-D.3
Kim, B.-J.4
Kim, Y.C.5
Lee, J.D.6
Park, B.-G.7
|