Room temperature polariton lasing from a single GaN nanowire microcavity

IEEE Photonic Society 24th Annual Meeting, PHO 2011

Volumn , Issue , 2011, Pages 119-120

  Das, A ^a   Heo, J ^a   Jankowski, M ^a   Guo, W ^a   Zhang, L ^a   Deng, H ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MEDIUM; BAND-GAP SEMICONDUCTORS; BOSE CONDENSATION; BOSE-EINSTEIN CONDENSATES; CRITICAL TEMPERATURES; DETUNINGS; DIELECTRIC MICROCAVITIES; EXCITON BOHR RADIUS; EXCITON-BINDING ENERGY; EXCITON-POLARITON; EXTENDED DEFECT; GAAS; GAN NANOWIRES; HIGH ENERGY CONSUMPTION; LASING CHARACTERISTICS; MATERIAL QUALITY; MEDICAL DIAGNOSTICS; OSCILLATOR STRENGTHS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLARITON LASER; POLARITONS; POLARIZATION FIELD; ROOM TEMPERATURE; STRUCTURAL DEFECT; SURFACE RECOMBINATION VELOCITIES; ULTRA-FAST; ULTRA-LOW THRESHOLD;

BINDING ENERGY; ENERGY UTILIZATION; EXCITONS; GALLIUM NITRIDE; MICROCAVITIES; MOLECULAR BEAM EPITAXY; NANOWIRES; OPTICAL COMMUNICATION; PHONONS; PHOTONS; POLARIZATION; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; STATISTICAL MECHANICS; STEAM CONDENSERS; SURFACE DEFECTS;

QUANTUM THEORY;

EID: 84862963146     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PHO.2011.6110454     Document Type: Conference Paper

References (4)

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4. J.Levrat et al., Phys. Rev. B 81, 125305 (2010).