Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates

IEEE Photonic Society 24th Annual Meeting, PHO 2011

Volumn , Issue , 2011, Pages 503-504

  Raring, J W ^a   Schmidt, M C ^a   Poblenz, C ^a   Lin, Y ^a   Bai, C ^a   Rudy, P ^a   Speck, J S ^a   Denbaars, S P ^a   Nakamura, S ^a  

^a Soraa Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GREEN LASER; NON-POLAR; OUTPUT POWER; RECENT PROGRESS; SINGLE MODE; SINGLE-MODE LASERS; WALLPLUG EFFICIENCY;

HIGH POWER LASERS; LASER MODES;

GALLIUM COMPOUNDS;

EID: 84862939621     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PHO.2011.6110781     Document Type: Conference Paper

References (5)

1. S. Chichibu, T. Azuhata,T. Sota, and S. Nakamura, "Spontaneous emission of localized excitons in InGaN single and multiquantum well structures," Appl. Phys. Lett. 69, 4188-4190, 1996. (Pubitemid 126619294)
2. M.C. Schmidt, K.C. Kim, R.M. Farrell, D.F. Feezell, D.A. Cohen, K. Saito, K. Fujito, J.S. Speck, S.P. DenBaars, and S. Nakamura, "Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes," Jpn. J. Appl. Phys. 46, No. 9, 190-191, 2007.
3. K. Okamoto, H. Ohta, S.F. Chichibu, J. Ichihara, and H. Takasu, "Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes," Jpn. J. Appl. Phys. 46, No. 9, 187-189, 2007.
4. Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, "531nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20-21} Free-Standing GaN Substrates," Appl. Phys. Express 2, 082101, 2009.
5. J.W. Raring, M.C. Schmidt, C. Poblenz, Y.C. Chang, M.J. Mondry, B. Li, J. Iveland, B. Walter, M.R. Krames, R. Craig, P. Rudy, J.S. Speck, S.P. DenBaars, and S. Nakamura, "High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates," Appl. Phys. Express 3, 112101, 2010.