Transport properties of a single-molecule diode

ACS Nano

Volumn 6, Issue 6, 2012, Pages 4931-4939

  Lörtscher, Emanuel ^a   Gotsmann, Bernd ^a   Lee, Youngu ^b   Yu, Luping ^c   Rettner, Charles ^d   Riel, Heike ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^c UNIVERSITY OF CHICAGO   (United States)

^d IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

mechanically controllable break junction; molecular electronics; rectification; single molecule transport

Indexed keywords

APPLIED BIAS; CONDUCTANCE HISTOGRAMS; DIBLOCKS; DONOR AND ACCEPTOR; LEVEL-SHIFTING; MECHANICALLY CONTROLLABLE BREAK-JUNCTION; MOLECULAR ENERGY LEVELS; MOLECULAR JUNCTION; NONSYMMETRIC; RECTIFICATION; SEMIEMPIRICAL MODELS; SINGLE-MOLECULE; TEMPERATURE RANGE; VARIABLE COUPLING; VOLTAGE DROP;

BIAS VOLTAGE; ELECTRIC RECTIFIERS; MOLECULAR ELECTRONICS; MOLECULES; TRANSPORT PROPERTIES;

CURRENT VOLTAGE CHARACTERISTICS;

BIPHENYL; BIPHENYL DERIVATIVE; NANOPARTICLE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; NANOTECHNOLOGY; SEMICONDUCTOR; ULTRASTRUCTURE;

BIPHENYL COMPOUNDS; COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MODELS, CHEMICAL; NANOPARTICLES; NANOTECHNOLOGY; SEMICONDUCTORS;

EID: 84862856428     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300438h     Document Type: Article

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