Epitaxial growth and interface strain coupling effects in manganite film/piezoelectric-crystal multiferroic heterostructures

Materials Chemistry and Physics

Volumn 133, Issue 1, 2012, Pages 42-46

  Zheng, R K ^a,b   Wang, Y ^b   Liu, Y K ^c   Gao, G Y ^b   Fei, L F ^b   Jiang, Y ^b   Chan, H L W ^b   Li, X M ^a   Luo, H S ^a   Li, X G ^c  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

A. Thin film; B. Epitaxial growth; C. Electronic characterisation; D. Transport properties

Indexed keywords

C. ELECTRONIC CHARACTERISATION; COEXISTING PHASIS; COLOSSAL MAGNETORESISTIVE; COUPLING EFFECT; ELASTIC COUPLING; INTERFACE STRAIN; LATTICE STRAIN; LSMO FILMS; MANGANITE FILMS; MULTIFERROIC PROPERTIES; MULTIFERROICS; PHENOMENOLOGICAL MODELS; PIEZOELECTRIC STRAIN; RESISTIVITY DATA; SINGLE-CRYSTAL SUBSTRATES;

EPITAXIAL GROWTH; LEAD; MAGNETIC FIELDS; MANGANESE OXIDE; PHASE SEPARATION; SUBSTRATES; THIN FILMS; TRANSPORT PROPERTIES;

INTERFACES (MATERIALS);

EID: 84862807332     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2011.12.019     Document Type: Article

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