Persistent photoexcitation effect on the poly(3-hexylthiophene) film: Impedance measurement and modeling

Synthetic Metals

Volumn 162, Issue 5-6, 2012, Pages 460-465

  Kim, Chang Hyun ^a   Kisiel, Krzysztof ^b   Jung, Jaroslaw ^b   Ulanski, Jacek ^b   Tondelier, Denis ^a   Geffroy, Bernard ^a,c   Bonnassieux, Yvan ^a   Horowitz, Gilles ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^c CEA SACLAY   (France)

Author keywords

Equivalent circuit modeling; Impedance spectroscopy; PH3T; Photosensitivity

Indexed keywords

AMBIENT CONDITIONS; AU ELECTRODES; CIRCUIT PARAMETER; CONSTANT PHASE ELEMENT; EQUIVALENT CIRCUIT MODELING; IMPEDANCE MEASUREMENT; IMPEDANCE SPECTROSCOPY; INITIAL STATE; METAL-SEMICONDUCTOR-METAL DEVICES; OHMIC BEHAVIOR; PH3T; PHOTOGENERATED CARRIERS; POLY-3-HEXYLTHIOPHENE; RELAXATION BEHAVIORS; RESISTANCE CAPACITANCE; SLOW RELAXATIONS; TIME VARYING;

CAPACITANCE; ELECTRIC IMPEDANCE MEASUREMENT; PHOTOEXCITATION; PHOTOSENSITIVITY; RELAXATION PROCESSES; SEMICONDUCTOR DEVICES;

CARRIER MOBILITY;

EID: 84862797390     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2011.12.021     Document Type: Article

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