Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2

Scripta Materialia

Volumn 66, Issue 10, 2012, Pages 821-824

  Bao, N N ^a   Yi, J B ^b   Fan, H M ^c   Qin, X B ^d   Zhang, P ^d   Wang, B Y ^d   Ding, J ^a   Li, S ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c NORTHWEST UNIVERSITY   (China)

^d INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Diluted magnetic semiconductor; Room temperature ferromagnetism; TiO 2; Vacancy

Indexed keywords

AS-DEPOSITED FILMS; DEPOSITION PROCESSING; DILUTED MAGNETIC SEMICONDUCTORS; DOPING CONCENTRATION; OXYGEN PARTIAL PRESSURE; ROOM-TEMPERATURE FERROMAGNETISM; TIO; VALENCE STATE;

GALLIUM; MAGNETIC SEMICONDUCTORS; POSITRON ANNIHILATION SPECTROSCOPY; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; SODIUM; TIN; TITANIUM DIOXIDE; VACANCIES;

FERROMAGNETISM;

EID: 84862786923     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2012.02.031     Document Type: Article

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