Bridgman growth, crystallographic characterization and electrical properties of relaxor-based ferroelectric single crystal PIMNT

Journal of Alloys and Compounds

Volumn 518, Issue , 2012, Pages 63-67

  Chen, Hongbing ^a   Liang, Zhe ^a   Luo, Laihui ^a   Ke, Yiyang ^a   Shen, Qi ^a   Xia, Zongren ^b   Jiang, Chengyong ^a   Pan, Jianguo ^a  

^a NINGBO UNIVERSITY   (China)

^b Deqing Huaying Electronics Company   (China)

Author keywords

Bridgman technique; Crystal growth; Crystallographic characterization; Electrical property; Relaxor based ferroelectric single crystal

Indexed keywords

AS-GROWN CRYSTAL; BINARY CRYSTALS; BRIDGMAN GROWTH; BRIDGMAN PROCESS; BRIDGMAN TECHNIQUES; COERCIVE FIELD; COLUMBITE PRECURSOR; CRYSTAL WAFERS; CRYSTALLOGRAPHIC CHARACTERIZATION; DIELECTRIC PERMITTIVITIES; ELECTRICAL PROPERTY; GROWTH DIRECTIONS; MOLAR RATIO; OPTIMUM CONDITIONS; PHASE EVOLUTIONS; PIEZOELECTRIC COEFFICIENT; RELAXOR-BASED FERROELECTRICS; RHOMBOHEDRAL PHASE; TERNARY CRYSTALS; TETRAGONAL PHASE; WORKING TEMPERATURES; XRD;

CRYSTAL GROWTH; DIELECTRIC LOSSES; ELECTRIC PROPERTIES; FERROELECTRICITY; LEAD; PERMITTIVITY; PIEZOELECTRICITY; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; ULTRASONIC APPLICATIONS; ULTRASONIC DEVICES;

CRYSTAL ORIENTATION;

EID: 84862776879     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.12.126     Document Type: Article

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