Enhanced first-order Raman scattering from arrays of vertical silicon nanowires

Nanotechnology

Volumn 23, Issue 27, 2012, Pages

  Khorasaninejad, M ^a   Walia, J ^a   Saini, S S ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; CRYSTALLINE STRUCTURE; DEFECT-FREE; ENHANCED RAMAN SCATTERING; ENHANCEMENT FACTOR; FINITE-DIFFERENCE TIME-DOMAIN SIMULATION; FIRST-ORDER; FIRST-ORDER RAMAN SCATTERING; LASER POWER; MODEL-BASED OPC; PEAK BROADENING; PER UNIT VOLUME; PHONON MODE; PHONON PEAKS; RAMAN ENHANCEMENT; RAMAN INTENSITIES; SILICON NANOWIRE ARRAYS; SILICON NANOWIRES; SILICON-ON-INSULATORS; SOI WAFERS;

FINITE DIFFERENCE TIME DOMAIN METHOD; NANOWIRES; PHONONS; RAMAN SCATTERING;

SILICON WAFERS;

NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; LIGHT; MATERIALS TESTING; METHODOLOGY; RADIATION SCATTERING; RAMAN SPECTROMETRY; ULTRASTRUCTURE;

LIGHT; MATERIALS TESTING; NANOTUBES; SCATTERING, RADIATION; SILICON; SPECTRUM ANALYSIS, RAMAN;

EID: 84862658218     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/27/275706     Document Type: Article

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