Effects of sintering temperature on the internal barrier layer capacitor (IBLC) structure in CaCu 3Ti 4O 12 (CCTO) ceramics

Journal of the European Ceramic Society

Volumn 32, Issue 12, 2012, Pages 3313-3323

  Schmidt, Rainer ^a   Stennett, Martin C ^b   Hyatt, Neil C ^b   Pokorny, Jan ^b,c   Prado Gonjal, Jesús ^a   Li, Ming ^b   Sinclair, Derek C ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

B. Grain boundaries; C. Chemical properties; C. Dielectric properties; D. Perovskites; E. Capacitors

Indexed keywords

BULK RESISTIVITY; CHEMICAL CHANGE; CU SEGREGATION; DETECTION LIMITS; E. CAPACITORS; ENERGY DISPERSIVE ANALYSIS OF X-RAYS; GRAIN INTERIORS; IMPEDANCE SPECTROSCOPY; INTERNAL BARRIER-LAYER CAPACITOR STRUCTURES; SINTERING TEMPERATURES;

CAPACITORS; CERAMIC MATERIALS; CHEMICAL PROPERTIES; DIELECTRIC PROPERTIES; GRAIN BOUNDARIES; PEROVSKITE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; X RAY ABSORPTION SPECTROSCOPY;

SINTERING;

EID: 84862495568     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2012.03.040     Document Type: Article

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