An all-gas-phase approach for the fabrication of silicon nanocrystal light-emitting devices

Nano Letters

Volumn 12, Issue 6, 2012, Pages 2822-2825

  Anthony, Rebecca J ^a   Cheng, Kai Yuan ^a   Holman, Zachary C ^a   Holmes, Russell J ^a   Kortshagen, Uwe R ^a  

^a University of Minnesota   (United States)

Author keywords

gas phase; light emitting device; nanocrystals; plasma; Silicon

Indexed keywords

CONTROLLED DEPOSITION; ELECTRONIC DEVICE; EXTERNAL QUANTUM EFFICIENCY; GASPHASE; LIGHT EMITTING DEVICES; METAL ELECTRODES; NANOCRYSTAL FILMS; SILICON NANOCRYSTALS; SINGLE REACTOR; TRANSPARENT ELECTRODE;

NANOCRYSTALS; OPTICAL WAVEGUIDES; PLASMAS; SILICON;

CURRENT DENSITY;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; GAS; ILLUMINATION; INSTRUMENTATION; METHODOLOGY; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GASES; LIGHTING; NANOSTRUCTURES; SEMICONDUCTORS; SILICON;

EID: 84862274015     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300164z     Document Type: Article

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