α-In 2S 3 and β-In 2S 3 phases produced by SILAR technique

Philosophical Magazine

Volumn 92, Issue 13, 2012, Pages 1716-1726

  Turan, E ^a   Zor, M ^a   Kul, M ^a   Aybek, A S ^a   Taskopru, T ^a,b  

^a ANADOLU UNIVERSITY   (Turkey)

^b Çankriri University   (Turkey)

Author keywords

In 2S 3 and In 2S 3; FESEM; optical properties; SILAR; X ray diffraction

Indexed keywords

CRYSTALLINITIES; DEPOSITED MATERIALS; DIFFRACTION SPECTRA; DIRECT BAND GAP; FESEM; IONIC ADSORPTION; ROOM TEMPERATURE; SILAR; STRUCTURAL AND OPTICAL PROPERTIES;

ADSORPTION; X RAY DIFFRACTION;

OPTICAL PROPERTIES;

EID: 84862065161     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786435.2012.657708     Document Type: Article

References (28)

1. N. Naghavi, D. Abou-Ras, N. Allsop, N. Barreau, S. Bücheler, A. Ennaoui, C.-H. Fischer, C. Guillen, D. Hariskos, J. Herrero, R. Klenk, K. Kushiya, D. Lincot, R. Menner, T. Nakada, C. Platzer-Björkman, S. Spiering, A.N. Tiwari and T. Törndahl, Prog. Photovolt. Res. Appl. 18 (2010) p.411.
2. S. Gall, N. Barreau, S. Harel, J.C. Bernede and J. Kessler, Thin Solid Films 480 (2005) p.138.
3. N.A. Allsop, A. Schönmann, H.-J. Muöer, M. Bar, M.C. Lux-Steiner and Ch.-H. Fischer, Prog. Photovolt. Res. Appl. 13 (2005) p.607.
4. E.B. Yousfi, B. Weinberger, F. Donsanti, P. Cowache and D. Lincot, Thin Solid Films 387 (2001) p.29.
5. R. Diehl, C.D. Carpenter and R. Nietsche, Acta Crystallogr. B (1976) p.1257.
6. N. Barreau, Sol. Energy 83 (2009) p.363.
7. C.D. Lokhande, A. Ennaoui, P.S. Patil, M. Giersig, K. Diesner, M. Muller and H. Tributsch, Thin Solid Films 340 (1999) p.18.
8. M. Kundakci, A. Ates, A. Astam and M. Yildirim, Physica E 40 (2008) p.600.
9. R. Ranjith, T.T. John, C. Sudha Kartha, K.P. Vijayakumar, T. Abe and Y. Kashiwaba, Mater. Sci. Semicond. Proc. 10 (2007) p.49.
10. H.M. Pathan, C.D. Lokhande, S.S. Kulkarni, D.P. Amalnerkar, T. Seth and S.-H. Han, Mater. Res. Bull. 40 (2005) p.1018.
11. R.S. Mane and C.D. Lokhande, Mater. Chem. Phys. 78 (2002) p.15.
12. A.R. Warrier, T.T. John, K.P. Vijayakumar and C.S. Kartha, Open. Condens. Matter Phys. J. 2 (2009) p.9.
13. A.S. Cherian, M. Mathew, C. Sudha Kartha and K.P. Vijayakumar, Thin Solid Films 518 (2010) p.1779.
14. Y. Yasaki, N. Sonoyama and T. Sakata, J. Electroanal. Chem. 469 (1999) p.116.
15. N. Barreau, S. Marsillac, J.C. Bernede, T. Ben Nasrallah and S. Belgacem, Phys. Status Solidi A 184 (2001) p.179.
16. H. Ihara, H. Abe, S. Endo and T. Irie, Solid State Commun. 28 (1978) p.563.
17. S. Rengaraj, S. Venkataraj, C. Tai, Y. Kim, E. Repo and M. Sillanpaa, Langmuir 27 (2011) p.5534.
18. T. Asikainen, M. Ritala and M. Leskela, Appl. Surf. Sci. 82/83 (1994) p.122.
19. M. Bachman, Glass substrates cleaning (2010). Available at http://www.nanofab.ubc.ca/ process-glass-substrates-cleaning
20. W. Vallejo and J. Claviko, Braz. J. Phys. 40 (2010) p.30.
21. S. Chavhan and R. Sharma, J. Phys. Chem. Solids 67 (2006) p.767.
22. P. Pistor, Formation and electronic properties of In2S3/Cu (In, Ga)Se2 junctions and related thin film solar cells, PhD thesis, Freie Universität, Berlin (2009).
23. V.G. Bessergenev, A.V. Bessergenev, E.N. Ivanova and Yu.A. Kovalevskaya, J. Solid State Chem. 137 (1998) p.6.
24. C.J.M. Rooymans, J. Inorg. Nucl. Chem. 11 (1959) p.78.
25. A. Likforman, M. Guittard, A. Tomas and J. Flahaut, J. Solid State Chem. 34 (1980) p.353.
26. B.D. Cullity and S.R. Stock, Elements of X-ray Diffraction, Prentice-Hall, Englewood Cliffs, NJ, 2001.
27. N. Revathi, P. Prathap and K.T. Reddy Ramakrishna, Appl. Surf. Sci. 254 (2008) p.5291.
28. J.I. Pankove, Optical Processes in Semiconductors, Dover Publications, New York, 1975.