Luminescence and defect studies of YAlO 3:Dy 3+, Sm 3+ single crystals exposed to 100 MeV Si 7+ ion beam

Journal of Luminescence

Volumn 132, Issue 10, 2012, Pages 2679-2683

  Premkumar, H B ^a   Sunitha, D V ^a   Singh, Fouran ^b   Nagabhushana, H ^a   Sharma, S C ^a   Nagabhushana, B M ^c   Zhao, Guangjun ^d   Chen, Jianyu ^d   Chakradhar, R P S ^e  

^a TUMKUR UNIVERSITY   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c M S RAMAIAH INSTITUTE OF TECHNOLOGY   (India)

^d SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^e SURFACE ENGINEERING DIVISION   (India)

Author keywords

Dy 3+; Ion irradiation; Luminescence; Single crystals; Sm 3+; YAlO 3

Indexed keywords

DEFECT STUDY; DOPED CRYSTALS; FLUENCE RANGE; FLUENCES; GLOW PEAKS; ION BEAM IRRADIATION; ION FLUENCES; IONOLUMINESCENCE; PHOTOLUMINESCENCE SPECTRUM; PL EMISSION; PURE CRYSTALS; RARE EARTH IONS; ROOM TEMPERATURE; SAMPLE TEMPERATURE; THERMAL QUENCHING; YALO 3;

ION BEAMS; ION BOMBARDMENT; IRRADIATION; LUMINESCENCE; METAL IONS; SILICON; THERMOLUMINESCENCE;

SINGLE CRYSTALS;

EID: 84861942015     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2012.04.030     Document Type: Article

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