Retraction Note to: Sol–gel derived Co3O4 thin films: effect of annealing on structural, morphological and optoelectronic properties (Journal of Materials Science: Materials in Electronics, (2012), 23, (772–778), 10.1007/s10854-011-0491-x);Sol-gel derived Co3O4 thin films: Effect of annealing on structural, morphological and optoelectronic properties

Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 3, 2012, Pages 772-778

  Chougule, M A ^a   Pawar, S G ^a   Godse, P R ^a   Sakhare, R D ^a   Sen, Shashwati ^b   Patil, V B ^a  

^a SOLAPUR UNIVERSITY   (India)

^b BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTALLITE SIZE; DEPOSITION; ELECTRIC CONDUCTIVITY; ENERGY GAP; HALL MOBILITY; HOLE MOBILITY; MORPHOLOGY; NANOCRYSTALS; OPTICAL BAND GAPS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOL-GELS; SPIN GLASS; SUBSTRATES; TEXTURES; THIN FILMS; ULTRAVIOLET VISIBLE SPECTROSCOPY; X RAY DIFFRACTION;

ABSORPTION CO-EFFICIENT; DC ELECTRICAL CONDUCTIVITY; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTIVITY; OPTICAL BAND GAP ENERGY; OPTOELECTRONIC APPLICATIONS; OPTOELECTRONIC PROPERTIES; UV VISIBLE SPECTROSCOPY;

OPTICAL FILMS;

EID: 84861893323     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-021-06919-x     Document Type: Erratum

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