Abnormal blue shift of InGaN micro-size light emitting diodes

Solid-State Electronics

Volumn 50, Issue 9-10, 2006, Pages 1588-1594

  Pong, Bao Jen ^a,b   Chen, Chi Hsing ^a   Yen, Sheng Horng ^c   Hsu, Jin Fu ^a   Tun, Chun Ju ^a,d   Kuo, Yen Kuang ^c   Kuo, Cheng Huang ^a   Chi, Gou Chung ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^d NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

APSYS; Band filling effect; Electro ridge; InGaN; Ion implantation; Lateral carrier confinement; Light emitting diodes; Micro size; Simulation

Indexed keywords

COMPUTER SIMULATION; ELECTROLUMINESCENCE; ION IMPLANTATION; SEMICONDUCTOR DEVICES; THERMAL EFFECTS;

APSYS; BAND FILLING EFFECT; ELECTRO-RIDGE; INGAN; LATERAL CARRIER CONFINEMENT; MICRO-SIZE;

LIGHT EMITTING DIODES;

EID: 33751019646     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.07.011     Document Type: Article

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