Discovery of the persistent luminescence mechanism of CdSiO 3:Tb 3+

Journal of Physical Chemistry C

Volumn 116, Issue 20, 2012, Pages 11232-11240

  Rodrigues, Lucas C V ^a,b   Brito, Hermi F ^a   Hölsä, Jorma ^a,b   Stefani, Roberval ^c   Felinto, Maria C F C ^d   Lastusaari, Mika ^b   Laamanen, Taneli ^b   Nunes, Luiz A O ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITY OF TURKU   (Finland)

^c CIETEC   (Brazil)

^d INSTITUTO DE PESQUISAS ENERGÉTICAS E NUCLEARES   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EMISSION; CHARGING PROCESS; EXAFS; EXPERIMENTAL DATA; GROUND LEVEL; LOW BAND GAP; PERSISTENT LUMINESCENCE; ROOM TEMPERATURE; UV IRRADIATION; XANES; XANES SPECTRA;

ENERGY GAP; EUROPIUM;

THERMOLUMINESCENCE;

EID: 84861503234     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp212021k     Document Type: Article

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