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Volumn 258, Issue 19, 2012, Pages 7250-7254
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Comparative study of the influence of two distinct sulfurization ramping rates on the properties of Cu 2 ZnSnS 4 thin films
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Author keywords
Ramping rate; Sputtering; Sulfurization; Thin film
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Indexed keywords
BINARY ALLOYS;
ENERGY GAP;
HEATING RATE;
II-VI SEMICONDUCTORS;
IV-VI SEMICONDUCTORS;
LAYERED SEMICONDUCTORS;
SCANNING ELECTRON MICROSCOPY;
SPUTTERING;
TIN COMPOUNDS;
X RAY DIFFRACTION;
ZINC SULFIDE;
AMORPHOUS PHASIS;
COMPARATIVE ANALYSIS;
COMPARATIVE STUDIES;
CRYSTALLOGRAPHIC QUALITY;
ENERGY DISPERSIVE;
RAMPING RATE;
REACTION MECHANISM;
SULFURIZATION;
THIN FILMS;
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EID: 84861341520
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2012.02.141 Document Type: Article |
Times cited : (57)
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References (19)
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