Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Journal of Physical Chemistry C

Volumn 116, Issue 18, 2012, Pages 10181-10185

  Wang, Di Yan ^a   Wang, I Sheng ^b   Huang, I Sheng ^b   Yeh, Yun Chieh ^a   Li, Shao Sian ^a   Tu, Kun Hua ^a   Chen, Chia Chun ^b,c   Chen, Chun Wei ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CDSE/ZNS; DEPOSITION TECHNIQUE; ELECTRON BLOCKING; EMISSIVE LAYERS; GRAPHENE OXIDES; HOLE TRANSPORTING LAYERS; INTERFACIAL LAYER; LAYER NUMBER; LAYER-BY-LAYERS; QUANTUM-DOT LIGHT EMITTING DIODES; SOLUTION PROCESSABLE; SOLUTION-PROCESSED;

DEPOSITION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM DOTS; THIN FILMS; VAPOR DEPOSITION;

LIGHT EMITTING DIODES;

EID: 84861043580     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp210062x     Document Type: Article

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