A wideband CMOS/GaAs HBT envelope tracking power amplifier for 4G LTE mobile terminal applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 60, Issue 5, 2012, Pages 1321-1330

  Hassan, Muhammad ^a   Larson, Lawrence E ^b   Leung, Vincent W ^c   Kimball, Donald F ^d   Asbeck, Peter M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Brown University   (United States)

^c QUALCOMM INC   (United States)

^d MaXentric Technologies LLC   (United States)

Author keywords

Envelope shaping; envelope tracking (ET); long term evolution (LTE); polar transmitter

Indexed keywords

CMOS PROCESSS; CONTROLLED SWITCHING; CURRENT SOURCES; DIGITAL PREDISTORTION; ENVELOPE SHAPING; ENVELOPE TRACKING; GAAS HBT; HIGH CURRENTS; LINEAR AMPLIFIERS; LONG-TERM EVOLUTION; MOBILE TERMINAL; OUTPUT POWER LEVELS; OVERALL EFFICIENCY; PEAK TO AVERAGE POWER RATIO; POLAR TRANSMITTER; QUIESCENT CURRENTS; RF POWER AMPLIFIERS; SYSTEM EFFICIENCY; VOLTAGE SOURCE; WIDE-BAND;

CMOS INTEGRATED CIRCUITS; COMPUTER TERMINALS; DIGITAL INTEGRATED CIRCUITS; EFFICIENCY; MOBILE PHONES; POWER AMPLIFIERS; WIRELESS TELECOMMUNICATION SYSTEMS;

BROADBAND AMPLIFIERS;

EID: 84860666920     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2012.2187537     Document Type: Conference Paper

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