Effects of NH+4 on Ce(IV) electro-regeneration in simulated and real spent TFT-LCD Cr-etching solutions

Journal of Environmental Management

Volumn 104, Issue , 2012, Pages 85-90

  Chen, Te San ^a   Huang, Kuo Lin ^a   Lai, Yu Chan ^a   Kuo, Yi Ming ^b  

^a NATIONAL PINGTUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b CHUNG HWA UNIVERSITY OF MEDICAL TECHNOLOGY   (Taiwan)

Author keywords

Ce(IV) yield; Electro regeneration; Rate constant; Spent TFT LCD Cr etching solution

Indexed keywords

ACTIVATION ENERGY; CHROMIUM COMPOUNDS; CRYSTAL IMPURITIES; ETCHING; OXIDATION; SURFACE DIFFUSION; THIN FILM TRANSISTORS;

APPARENT DIFFUSION COEFFICIENT; APPARENT RATE CONSTANT; CE(IV) YIELD; CYCLIC VOLTAMMETRIC; ELECTRO-REGENERATION; ELECTROLYTICS; ETCHING SOLUTIONS; PRESENCE-ABSENCE; SPEND THIN-FILM TRANSISTOR LIQUID-CRYSTAL DISPLAY CR-ETCHING SOLUTION; THIN FILM TRANSISTORS LIQUID CRYSTAL DISPLAY;

RATE CONSTANTS;

AMMONIA; ANION; CERIUM OXIDE;

ACTIVATION ENERGY; AMMONIUM; ANION; CERIUM; DIFFUSION; ELECTROKINESIS; OXIDATION; REACTION RATE;

ARTICLE; CATION EXCHANGE; CELL DIVISION; CYCLIC POTENTIOMETRY; DIFFUSION; ENERGY; ENVIRONMENTAL PARAMETERS; LIQUID CRYSTAL; OXIDATION; SEMICONDUCTOR; THIN FILM TRANSISTOR;

EID: 84860627697     PISSN: 03014797     EISSN: 10958630     Source Type: Journal    
DOI: 10.1016/j.jenvman.2012.03.026     Document Type: Article

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