Ab initio approach to the rate of radiative electron trapping and electron-hole recombination in B-, C-, and N-doped anatase

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 5, 2012, Pages 1063-1071

  Zhukov, V P ^a,b   Chulkov, E V ^b,c  

^a INSTITUTE OF SOLID STATE CHEMISTRY   (Russian Federation)

^b DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

^c CENTRO MIXTO CSIC UPV EHU   (Spain)

Author keywords

Anatase; Electron hole recombination; Electronic band structure; Impurities; Photocatalysis

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRON TRAPS; IMPURITIES; PERTURBATION TECHNIQUES; PHOTOCATALYSIS; SEMICONDUCTOR DOPING; TITANIUM DIOXIDE;

AB INITIO APPROACH; DIPOLE APPROXIMATION; ELECTRON-HOLE RECOMBINATION; ELECTRONIC BAND STRUCTURE; FIRST PRINCIPLE METHOD; IMPURITIES IN SEMI CONDUCTORS; PERTURBATION THEORY; RADIATIVE PROCESS;

ELECTRONS;

EID: 84860249088     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201147424     Document Type: Article

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