Axially-resolved luminescence properties of individual ZnSe nanowires

Journal of Physical Chemistry C

Volumn 116, Issue 15, 2012, Pages 8819-8823

  Zhuang, Junping ^a   Liang, Yao ^a   Xiao, X D ^a   Hark, S K ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION DYNAMICS; DEEP LEVEL; FAST PROCESS; LASER SCANNING CONFOCAL MICROSCOPES; LUMINESCENCE DECAYS; LUMINESCENCE PROPERTIES; NEAR BAND EDGE; PLASMONIC; SHAPE DISTRIBUTION; SLOW COMPONENT; TIME-CORRELATED SINGLE PHOTON COUNTING; TWO-PHOTON EXCITED LUMINESCENCES; ZNSE NANOWIRES;

LUMINESCENCE;

NANOWIRES;

EID: 84860171962     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp300051s     Document Type: Article

References (21)

1. Minot, E. D.; Kelkensberg, F.; van Kouwen, M.; van Dam, J. A.; Kouwenhoven, L. P.; Zwiller, V.; Borgström, M. T.; Wunnicke, O.; Verheijen, M. A.; Bakkers, E. P. A. M. Nano Lett. 2007, 7, 367
2. Pettersson, H.; Trägrdh, J.; Persson, A. I.; Landin, L.; Hessman, D.; Samuelson, L. Nano Lett. 2006, 6, 229
3. Patolsky, F.; Zheng, G.; Lieber, C. M. Anal. Chem. 2006, 78, 4260
4. Titova, L. V.; Hoang, T. B.; Jackson, H. E.; Smith, L. M.; Yarrison-Rice, J. M.; Lensch, J. L.; Lauhon, L. J. Appl. Phys. Lett. 2006, 89, 053119
5. Rakovich, Y. P.; Volkov, Y.; Sapra, S.; Susha, A. S.; Döblinger, M.; Donegan, J. F.; Rogach, A. L. J. Phys. Chem. C 2007, 111, 18927
6. Perera, S.; Fickenscher, M. A.; Jackson, H. E.; Smith, L. M.; Yarrison-Rice, J. M.; Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Zhang, X.; Zou, J. Appl. Phys. Lett. 2008, 93, 053110
7. Li, Q.; Wang, G. T. Nano Lett. 2010, 10, 1554
8. Liu, Z.; Hark, S. K. Nanotechnology 2006, 17, 1355
9. Parkinson, P.; Joyce, H. J.; Gao, Q.; Tan, H. H.; Zhang, X.; Zou, J.; Jagadish, C.; Herz, L. M.; Johnston, M. B. Nano Lett. 2009, 9, 3349
10. Berndt, M.; Lorenz, M.; Enderlein, J.; Diez, S. Nano Lett. 2010, 10, 1497
11. Liang, Y.; Tao, Y.; Hark, S. K. CrystEngComm 2011, 13, 5751
12. Said, A. A.; Sheik-Bahae, M.; Hagan, D. J.; Wei, T. H.; Wang, J.; Young, J.; Stryland, E. W. V. J. Opt. Soc. Am. B 1992, 9, 405
13. Hutchings, D. C.; Stryland, E. W. V. J. Opt. Soc. Am. B 1992, 9, 2065
14. Yu, P.Y.;; Cardona, M. Fundamentals of Semiconductors, 3 rd ed.; Springer: Berlin, 2001; p, 282.
15. Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J. M.; Jagadish, C. Semicond. Sci. Technol. 2010, 25, 024010
16. Gfroerer, T. H. Photoluminescence in Analysis of Surfaces and Interfaces; Meyers, R.A., Ed.; John Wiley & Sons: New York, 2006; pp 9209-9231.
17. Li, S. S. Semiconductor Physical Electronics, 2 nd ed.; Springer: New York, 2006; pp 134-169.
18. Othonos, A.; Lioudakis, E.; Philipose, U.; Ruda, H. E. Appl. Phys. Lett. 2007, 91, 241113
19. Rong, F. C.; Barry, W. A.; Donegan, J. F.; Watkins, G. D. Phys. Rev. B 1996, 54, 7779
20. Achermann, M. J. Phys. Chem. Lett. 2010, 1, 2837
21. Rumke, T. M.; Sanchez-Gil, J. A.; Muskens, O. L.; Borgstrom, M. T.; Bakkers, E. P. A. M.; Gomez Rivas, J. Opt. Lett. 2008, 16, 5103