Modulation of quartz-like GeO 2 structure by Si substitution: An X-ray diffraction study of Ge 1-x Si xO 2 (0 x < 0.2) flux-grown single crystals

Journal of Applied Crystallography

Volumn 45, Issue 2, 2012, Pages 272-278

  Lignie, Adrien ^a   Granier, Dominique ^a   Armand, Pascale ^a   Haines, Julien ^a   Papet, Philippe ^a  

^a INSTITUT CHARLES GERHARDT   (France)

Author keywords

GeO 2; piezoelectricity; quartz structure; SiO 2; X ray diffraction

Indexed keywords

BRIDGING ANGLE; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GEO 2; GOOD CORRELATIONS; HIGH-TEMPERATURE FLUX; HYDROXY GROUPS; LOW LEVEL; QUARTZ STRUCTURE; RELIABILITY FACTOR; ROOM TEMPERATURE; SILICON CONTENTS; SINGLE CRYSTAL X-RAY DIFFRACTION; SIO 2; SPONTANEOUS NUCLEATION; STRUCTURAL PARAMETER; X-RAY DIFFRACTION STUDIES;

CRYSTALLOGRAPHY; ENERGY DISPERSIVE SPECTROSCOPY; GERMANIUM; GERMANIUM OXIDES; PIEZOELECTRICITY; QUARTZ; SILICON OXIDES; SINGLE CRYSTALS; X RAY DIFFRACTION;

SILICON;

EID: 84859739531     PISSN: 00218898     EISSN: 16005767     Source Type: Journal    
DOI: 10.1107/S0021889812003081     Document Type: Article

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