Large SiO2-substituted GeO2 single-crystals with the α-quartz structure

Journal of Crystal Growth

Volumn 316, Issue 1, 2011, Pages 153-157

  Armand, Pascale ^a   Clément, Simon ^a   Balitsky, Denis ^a   Lignie, Adrien ^a   Papet, Philippe ^a  

^a INSTITUT CHARLES GERHARDT   (France)

Author keywords

A1. Characterization; A2. Growth from high temperature solutions; A2. Single crystal growth; B1. Oxides; B1. Quartz; B2. Piezoelectric materials

Indexed keywords

A1. CHARACTERIZATION; B1. OXIDES; B1. QUARTZ; B2. PIEZOELECTRIC MATERIALS; GROWTH FROM HIGH-TEMPERATURE SOLUTIONS;

CHEMICAL ANALYSIS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; MEMS; PIEZOELECTRIC DEVICES; PIEZOELECTRIC MATERIALS; PIEZOELECTRICITY; QUARTZ; SILICON COMPOUNDS; THERMAL EXPANSION; X RAY DIFFRACTION;

SINGLE CRYSTALS;

EID: 79551683631     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.12.030     Document Type: Article

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