IR-spectrophotoelectrochemical characterization of mesoporous semiconductor films

Analytical Chemistry

Volumn 84, Issue 7, 2012, Pages 3053-3057

  Berger, Thomas ^a   Anta, Juan A ^a  

^a UNIVERSIDAD PABLO DE OLAVIDE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP STATE; CHARGE EXTRACTION; ELECTROCHEMICAL METHODS; ELECTRODE POTENTIALS; EXTERNAL PERTURBATIONS; IN-SITU; IR-SPECTROSCOPY; MESOPOROUS; MESOPOROUS FILMS; OPEN CIRCUIT POTENTIAL; OPEN CIRCUITS; PASSIVE TRACKING; POTENTIOSTATIC MEASUREMENTS; QUASI-FERMI LEVEL; SEMICONDUCTOR BAND GAP; SEMICONDUCTOR FILMS; SEMICONDUCTOR NANOPARTICLES; SEMICONDUCTOR/ELECTROLYTE INTERFACES; VIBRATIONAL PROPERTIES;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS);

MESOPOROUS MATERIALS;

EID: 84859387673     PISSN: 00032700     EISSN: None     Source Type: Journal    
DOI: 10.1021/ac300098u     Document Type: Article

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