메뉴 건너뛰기




Volumn 85, Issue 3, 2012, Pages 185-194

Insulator-to-metal transition in vanadium sesquioxide: Does the Mott criterion work in this case?

Author keywords

metal insulator transition; Mott criterion; transition metal oxides; vanadium sesquioxide

Indexed keywords

ANTIFERROMAGNETIC INSULATORS; HEAVILY DOPED; HIGH TEMPERATURE; INSULATOR-TO-METAL TRANSITIONS; LOW TEMPERATURES; METAL-INSULATOR PHASE TRANSITION; MOTT CRITERION; PARAMAGNETIC INSULATOR; TRANSITION METAL OXIDES; VANADIUM SESQUIOXIDE;

EID: 84859199918     PISSN: 01411594     EISSN: 10290338     Source Type: Journal    
DOI: 10.1080/01411594.2011.604271     Document Type: Article
Times cited : (9)

References (46)
  • 2
    • 0002004726 scopus 로고
    • The basis of the electron theory of metals with special reference to the transition metals
    • N.F. Mott, The basis of the electron theory of metals with special reference to the transition metals, Proc. Phys. Soc. A62 (1949), pp. 416-422.
    • (1949) Proc. Phys. Soc. , vol.A62 , pp. 416-422
    • Mott, N.F.1
  • 4
    • 0342936069 scopus 로고
    • The metal-nonmetal transition: A global perspective
    • P.P. Edwards, T.V. Ramakrishnan, and C.N. Rao, The metal-nonmetal transition: A global perspective, J. Phys. Chem. 99 (1995), pp. 5228-5239.
    • (1995) J. Phys. Chem. , vol.99 , pp. 5228-5239
    • Edwards, P.P.1    Ramakrishnan, T.V.2    Rao, C.N.3
  • 5
    • 0015625763 scopus 로고
    • Metal-to-nonmetal transitions in doped ge and si
    • K.-F. Berggren, Metal-to-nonmetal transitions in doped Ge and Si, Philos. Mag. 27 (1973), pp. 1027-1040.
    • (1973) Philos. Mag. , vol.27 , pp. 1027-1040
    • Berggren, K.-F.1
  • 6
    • 44949281646 scopus 로고
    • Metal-non-metal transitions in doped semiconductors
    • A. Brezini and N. Zekri, Metal-non-metal transitions in doped semiconductors, Phys. Lett. 161 (1991), pp. 301-313.
    • (1991) Phys. Lett. , vol.161 , pp. 301-313
    • Brezini, A.1    Zekri, N.2
  • 7
    • 0032326693 scopus 로고    scopus 로고
    • On electrostatic models of a metal-insulator phase transition in crystalline semiconductors with hydrogen-like impurities
    • (a) N.A. Poklonski and A.I. Syaglo, On electrostatic models of a metal-insulator phase transition in crystalline semiconductors with hydrogen-like impurities, Phys. Solid State 40 (1998), pp. 132-135;
    • (1998) Phys. Solid State , vol.40 , pp. 132-135
    • Poklonski, N.A.1    Syaglo, A.I.2
  • 8
    • 3042856784 scopus 로고    scopus 로고
    • Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in ge and si crystals doped by hydrogenlike impurities
    • (b) N.A. Poklonskii, S.A. Vyrko, and A.G. Zabrodskii, Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogenlike impurities, Phys. Solid State 46 (2004), pp. 1101-1106.
    • (2004) Phys. Solid State , vol.46 , pp. 1101-1106
    • Poklonskii, N.A.1    Vyrko, S.A.2    Zabrodskii, A.G.3
  • 9
    • 36449007364 scopus 로고
    • Theoretical electronic properties of silicon containing bismuth
    • A. Ferreira da Silva, Theoretical electronic properties of silicon containing bismuth, J. Appl. Phys. 76 (1994), pp. 5249-5252.
    • (1994) J. Appl. Phys. , vol.76 , pp. 5249-5252
    • Ferreira Da Silva, A.1
  • 10
    • 84859194668 scopus 로고
    • Nonohmic conductivity of ge: Sb near a metal-insulator transition
    • G.A. Matveev and A.T. Lonchakov, Nonohmic conductivity of Ge: Sb near a metal-insulator transition, Semiconductors 27 (1993), pp. 228-231.
    • (1993) Semiconductors , vol.27 , pp. 228-231
    • Matveev, G.A.1    Lonchakov, A.T.2
  • 11
    • 0037320632 scopus 로고    scopus 로고
    • Positive and negative magnetoresistance on both sides of the metal-insulator transition in metallic n-type InP
    • A. El Kaaouachi, A. Nafidi, Ah. Nafidi, and G. Biskupski, Positive and negative magnetoresistance on both sides of the metal-insulator transition in metallic n-type InP, Semicond. Sci. Technol. 18 (2003), pp. 69-74.
    • (2003) Semicond. Sci. Technol. , vol.18 , pp. 69-74
    • El Kaaouachi, A.1    Nafidi, A.2    Nafidi, Ah.3    Biskupski, G.4
  • 12
    • 0037604658 scopus 로고    scopus 로고
    • Metal-insulator transition: The mott criterion and coherence length
    • A. Pergament, Metal-insulator transition: The Mott criterion and coherence length, J. Phys. Condens. Matter 15 (2003), pp. 3217-3224.
    • (2003) J. Phys. Condens. Matter , vol.15 , pp. 3217-3224
    • Pergament, A.1
  • 20
    • 63649120668 scopus 로고    scopus 로고
    • Multi-orbital effects in optical properties of vanadium sesquioxide
    • (9 pages)
    • J.M. Tomczak and S. Biermann, Multi-orbital effects in optical properties of vanadium sesquioxide, J. Phys. Condens. Matter 21 (2009), p. 064209 (9 pages).
    • (2009) J. Phys. Condens. Matter , vol.21 , pp. 064209
    • Tomczak, J.M.1    Biermann, S.2
  • 21
    • 61349184540 scopus 로고    scopus 로고
    • Surface dead layer near a mott transition
    • (5 pages)
    • G. Boghri, M. Fabrizio, and E. Tosatti, Surface dead layer near a Mott transition, Phys. Rev. Lett. 102 (2009), p. 066806 (5 pages).
    • (2009) Phys. Rev. Lett. , vol.102 , pp. 066806
    • Boghri, G.1    Fabrizio, M.2    Tosatti, E.3
  • 29
    • 0020202644 scopus 로고
    • Electrical transitions in metal oxides
    • J.M. Honig, Electrical transitions in metal oxides, J. Solid State Chem. 45 (1982), pp. 1-13.
    • (1982) J. Solid State Chem. , vol.45 , pp. 1-13
    • Honig, J.M.1
  • 33
    • 0002591559 scopus 로고    scopus 로고
    • Electroforming and switching in oxides of transition metals: The role of metal-insulator transition in the switching mechanism
    • F.A. Chudnovskii, L.L. Odynets, A.L. Pergament, and GB. Stefanovich, Electroforming and switching in oxides of transition metals: The role of metal-insulator transition in the switching mechanism, J. Solid State Chem. 122 (1996), pp. 95-99.
    • (1996) J. Solid State Chem. , vol.122 , pp. 95-99
    • Chudnovskii, F.A.1    Odynets, L.L.2    Pergament, A.L.3    Stefanovich, G.B.4
  • 38
    • 30244443605 scopus 로고
    • Anomalous variation ofphonon Raman intensities near the metal-to- mott-insulator transition in titanium oxide systems
    • T. Katsufuji and Y. Tokura, Anomalous variation ofphonon Raman intensities near the metal-to- Mott-insulator transition in titanium oxide systems, Phys. Rev. B 50 (1994), pp. 2704-2707.
    • (1994) Phys. Rev. B , vol.50 , pp. 2704-2707
    • Katsufuji, T.1    Tokura, Y.2
  • 39
    • 0035374179 scopus 로고    scopus 로고
    • The mechanism of the appearance of an electromotive force on heating of SmS single crystals
    • VV. Kaminskii, L.N. Vasil'ev, M.V. Romanova, and S.M. Solov'ev, The mechanism of the appearance of an electromotive force on heating of SmS single crystals, Phys. Solid State 43 (2001), pp. 1030-1032.
    • (2001) Phys. Solid State , vol.43 , pp. 1030-1032
    • Kaminskii, V.V.1    Vasil'ev, L.N.2    Romanova, M.V.3    Solov'ev, S.M.4
  • 41
    • 84957137921 scopus 로고
    • Degree of valence mixing in the metallic phase of SmS and TmSe
    • B. Batlogg, A. Schlegel, and P. Wachter, Degree of valence mixing in the metallic phase of SmS and TmSe, J. de Physique 37 (1976), pp. C4-267-C4-270.
    • (1976) J. De Physique , vol.37
    • Batlogg, B.1    Schlegel, A.2    Wachter, P.3
  • 43
    • 0035982696 scopus 로고    scopus 로고
    • Defect samarium ions and electromotive force generation in SmS
    • VV. Kaminskii, AV. Golubkov, and L.N. Vasil'ev, Defect samarium ions and electromotive force generation in SmS, Phys. Solid State 44 (2002), pp. 1574-1578.
    • (2002) Phys. Solid State , vol.44 , pp. 1574-1578
    • Kaminskii, V.V.1    Golubkov, A.V.2    Vasil'ev, L.N.3
  • 46
    • 77951097162 scopus 로고    scopus 로고
    • Excitonic insulator: Dependence of energy gap width on carrier density
    • A. Pergament, Excitonic insulator: Dependence of energy gap width on carrier density, Phase Trans. 83 (2010), pp. 159-168.
    • (2010) Phase Trans. , vol.83 , pp. 159-168
    • Pergament, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.