Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field

Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

  Dou, X M ^a   Sun, B Q ^a   Jiang, D S ^a   Ni, H Q ^a   Niu, Z C ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED ELECTRONS; APPLIED MAGNETIC FIELDS; ELECTRON-SPIN RELAXATION; HIGHER TEMPERATURES; HYPERFINE INTERACTIONS; INAS QUANTUM DOTS; LONGITUDINAL OPTICAL PHONONS; NUCLEAR-SPIN POLARIZATION; POSITIVELY CHARGED EXCITONS; SPIN RELAXATION; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE REGIMES; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

INDIUM ARSENIDE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SPIN DYNAMICS;

MAGNETIC FIELDS;

EID: 84858963225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3692066     Document Type: Article

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