Review of terahertz semiconductor sources

Journal of Semiconductors

Volumn 33, Issue 3, 2012, Pages

  Feng, Wei ^a  

^a JIANGSU UNIVERSITY   (China)

Author keywords

GaAs 1 xN x Gunn like diode; negative effective mass THz oscillator; THz quantum cascade laser; THz semiconductor sources

Indexed keywords

ACOUSTIC PHONONS; APPLIED BIAS; CURRENT PATTERNS; DC ELECTRIC FIELD; DEVICE PARAMETERS; DIFFERENTIAL VELOCITY; DOPING CONCENTRATION; ELECTRICALLY TUNABLE; ENVIRONMENTAL SCIENCE; EXTRACTION LEVEL; GAAS; INJECTION BARRIERS; MATERIAL SYSTEMS; NEGATIVE EFFECTIVE MASS; NONPARABOLIC CONDUCTION; OPTIC PHONON; SELF-OSCILLATING FREQUENCIES; SELF-OSCILLATIONS; SEMICONDUCTOR SOURCES; TERA HERTZ; TERAHERTZ TECHNOLOGY; THZ OSCILLATORS; THZ QUANTUM CASCADE LASERS; THZ SEMICONDUCTOR SOURCES; THZ SOURCES;

BIOACOUSTICS; DIODES; ELECTRIC FIELDS; GALLIUM ARSENIDE; GUNN DIODES; MONTE CARLO METHODS; OSCILLATORS (ELECTRONIC); PHONONS; QUANTUM CASCADE LASERS; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR DOPING;

EID: 84858409318     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/33/3/031001     Document Type: Review

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