MOCVD of Cd (1-x)Zn (x)S/CdTe PV cells using an ultra-thin absorber layer

Solar Energy Materials and Solar Cells

Volumn 101, Issue , 2012, Pages 68-72

  Clayton, A J ^a   Irvine, S J C ^a   Jones, E W ^a   Kartopu, G ^a   Barrioz, V ^a   Brooks, W S M ^a  

^a GLYNDWR UNIVERSITY   (United Kingdom)

Author keywords

CdTe; MOCVD; Thin film photovoltaics

Indexed keywords

ABSORBER LAYERS; ABSORPTION EDGES; CDS; CDTE; CDTE LAYERS; CELL PERFORMANCE; DEPOSITION TIME; EXTERNAL QUANTUM EFFICIENCY; METAL ORGANIC CHEMICAL VAPOUR DEPOSITIONS; OPTICAL TRANSPARENCY; P-TYPE CONDUCTIVITY; RED SHIFT; SHUNT RESISTANCES; THIN FILM PHOTOVOLTAICS; ULTRA-THIN; WINDOW LAYER;

ATMOSPHERIC PRESSURE; CADMIUM CHLORIDE; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CELLS; CYTOLOGY; FILM THICKNESS; LEACHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOVOLTAIC CELLS; ZINC;

CADMIUM TELLURIDE;

EID: 84858229091     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.02.018     Document Type: Article

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