Ultra-low noise InP pHEMTs for cryogenic deep-space and radio-astronomy applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2011, Pages

  Alt, A R ^a   Bolognesi, C R ^a   Gallego, J D ^b   Diez, C ^b   Lopez Fernandez, I ^b   Barcia, A ^b  

^a ETH ZURICH   (Switzerland)

^b Centro Astronomico de Yebes   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA SIZE; COSMIC MICROWAVE BACKGROUNDS; DEEP SPACE PROBE; INP; INP HEMT; LOW NOISE; NOISE PERFORMANCE; TRANSISTOR PERFORMANCE; VERY LOW NOISE;

ANTENNAS; ASTRONOMY; CRYOGENICS; INDIUM PHOSPHIDE; SPACE FLIGHT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84858204567     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. W. Pospieszalski, "Extremely Low-Noise Amplification with Cryogenic FETs and HFETs: 1970-2004, " Microwave Magazine, IEEE, vol. 6, pp. 62-75, 2005. (Pubitemid 41524331)
2. S. R. Bahl and J. A. del Alamo, "Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing, " Electron Device Letters, IEEE, vol. 13, pp. 195- 197, 1992.
3. DSCC, "Bond Strength (Destructive Bond Pull Test), Method 2011.8, " Test Method Standard, Microcircuits (MIL-STD-883), p. 729, February 2010.
4. G. Meneghesso, D. Buttari, E. Perin, C. Canali, and E. Zanoni, "Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layer, " in Electron Devices Meeting, 1998. IEDM '98 Technical Digest., International, 1998, pp. 227-230.