A CMOS 0.13μm Silicon Pixel Detector Readout ASIC for the PANDA experiment

Journal of Instrumentation

Volumn 7, Issue 2, 2012, Pages

  Mazza, G ^a   Calvo, D ^a   De Remigis, P ^a   Kugathasan, T ^a,b   Mignone, M ^a   Rivetti, A ^a   Toscano, L ^a   Wheadon, R ^a   Bonacini, A ^c  

^a SEZIONE DI TORINO   (Italy)

^b UNIVERSITY OF TURIN   (Italy)

^c CERN   (Switzerland)

Author keywords

Digital electronic circuits; Front end electronics for detector readout; Radiation hard electronics

Indexed keywords

EID: 84858020249     PISSN: None     EISSN: 17480221     Source Type: Journal    
DOI: 10.1088/1748-0221/7/02/C02015     Document Type: Article

References (5)

1. PANDA Technical Progress Report, FAIR-ESAC/Pbar February 2005
2. D. Calvo et al. 2008 Thinned epitaxial silicon hybrid pixel sensors for the PANDA experiment, Nucl. Instrum. Meth. A 594 29
3. D. Calvo et al. A Silicon Pixel Readout ASIC in CMOS 0.13 μm for the PANDA MicroVertex Detector, IEEE Nuclear Science Symposium Conference Record, 2008 October 19-25 2008, pg. 2934
4. I. Peric et al. 2006 The FEI3 readout chip for the ATLAS pixel detector, Nucl. Instrum. Meth. A 565 178
5. JEDEC, JESD8-13 Scalable Low-Voltage Signaling for 400 mV (SLVS-400)