Thinned epitaxial silicon hybrid pixel sensors for the PANDA experiment

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 594, Issue 1, 2008, Pages 29-32

  Calvo, D ^a   De Remigis, P ^a   Osmic, F ^b   Riedler, P ^b   Stefanini, G ^b   Wheadon, R ^a  

^a SEZIONE DI TORINO   (Italy)

^b CERN   (Switzerland)

Author keywords

Epitaxial; Pixel; Silicon

Indexed keywords

DETECTORS; EPITAXIAL LAYERS; EXPERIMENTS; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON;

EPITAXIAL SILICON; EPITAXIAL THICKNESSES; FRONT END CHIPS; HYBRID PIXEL SENSORS; RADIOACTIVE SOURCES; SENSOR ELEMENTS; TRACKING SYSTEMS;

PIXELS;

EID: 48549091096     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2008.05.065     Document Type: Article

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