Facile preparation of platelike tungsten oxide thin film electrodes with high photoelectrode activity

ACS Applied Materials and Interfaces

Volumn 3, Issue 10, 2011, Pages 4047-4052

  Amano, Fumiaki ^a   Tian, Min ^b   Wu, Guosheng ^b   Ohtani, Bunsho ^a   Chen, Aicheng ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b LAKEHEAD UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACT LAYER; DILUTE SULFURIC ACID; ELECTRON TRANSPORT; FACILE PREPARATION; HIGH TEMPERATURE; HIGHER TEMPERATURES; HYDROTHERMAL REACTION; INCIDENT PHOTON-TO-CURRENT CONVERSION EFFICIENCIES; NANOPARTICULATES; NITRIC ACID SOLUTIONS; PHOTOELECTROCHEMICAL OXIDATION; PHOTOELECTROCHEMICAL PERFORMANCE; PHOTOELECTRODE; PHOTOEXCITED ELECTRONS; PLATE-LIKE STRUCTURE; THICKNESS OF THE FILM; THIN-FILM ELECTRODE; TUNGSTEN OXIDE; TUNGSTEN OXIDE THIN FILMS; TUNGSTEN TRIOXIDE; VISIBLE LIGHT; WATER SPLITTING;

CALCINATION; CONVERSION EFFICIENCY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTROCHEMISTRY; ELECTRODES; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; HYDRATES; NITRIC ACID; OXIDES; SULFURIC ACID; THIN FILMS; TUNGSTEN; TUNGSTEN COMPOUNDS;

FILM PREPARATION;

EID: 84857727537     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am200897n     Document Type: Article

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