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Volumn 37, Issue 7, 2011, Pages 26-28

Commercial 600 V GaN-based power devices coming of age

Author keywords

[No Author keywords available]

Indexed keywords

ALINGAN; DEVICE DESIGN; ENERGY LOSS; FABRICATION PROCESS; HIGH QUALITY; INTERNATIONAL RECTIFIERS; LOWER COST; POWER DEVICES; SILICON SUBSTRATES; SILICON-BASED TECHNOLOGY; TECHNOLOGICAL CHALLENGES; TECHNOLOGY PLATFORMS; THERMAL COEFFICIENT OF EXPANSION; WIDE SPREADS; WIDE-BAND-GAP SEMICONDUCTOR;

EID: 84857607466     PISSN: 15402800     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (5)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.