SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 3, 2012, Pages 6225-6232

Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers

(6) Le Bris, A a,b,c Lombez, L a,b,c Laribi, S a,b,c Boissier, G d Christol, P d Guillemoles, J F a,b,c

a EDF R AND D (France)

b CNRS (France)

c PSL RESEARCH UNIVERSITY (France)

d UNIVERSITÉ MONTPELLIER II (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TEMPERATURE; CONTINUOUS WAVE; EFFICIENCY IMPROVEMENT; EMPIRICAL EXPRESSION; HIGH EXCITATION LEVELS; INCIDENT POWER; NON-EQUILIBRIUM CARRIERS; P-N JUNCTION; POTENTIAL EFFICIENCY; SOLAR CELL ABSORBERS; THERMALISATION;

GALLIUM ALLOYS; PHOTOLUMINESCENCE; SEMICONDUCTOR JUNCTIONS;

HOT CARRIERS;

ABSORPTION; ANTIMONY; ELECTRICAL CONDUCTIVITY; EQUILIBRIUM; GALLIUM; LUMINESCENCE; PHOTOCHEMISTRY; PHOTOVOLTAIC SYSTEM; REACTION RATE; THERMODYNAMIC PROPERTY;

EID: 84857541954 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c2ee02843c Document Type: Article

Times cited : (102)

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