Comparison of carrier multiplication yields in PbS and PbSe nanocrystals: The role of competing energy-loss processes

Nano Letters

Volumn 12, Issue 2, 2012, Pages 622-628

  Stewart, John T ^a   Padilha, Lazaro A ^a   Qazilbash, M Mumtaz ^a   Pietryga, Jeffrey M ^a   Midgett, Aaron G ^b,c   Luther, Joseph M ^b   Beard, Matthew C ^b   Nozik, Arthur J ^b,c   Klimov, Victor I ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c UNIVERSITY OF COLORADO   (United States)

Author keywords

Auger recombination; Carrier multiplication; hot exciton cooling; multiple exciton generation

Indexed keywords

AUGER RECOMBINATION; BIEXCITONS; BULK PROPERTIES; CARRIER MULTIPLICATION; COMPETING PROCESS; CONFINEMENT ENERGY; ELECTRON HOLE PAIRS; ENERGY-LOSS RATE; HIGH ENERGY PHOTONS; INFRARED BANDS; MULTIEXCITON GENERATION; MULTIPLE EXCITON; PBS NANOCRYSTAL; PBSE NANOCRYSTALS; PHONON EMISSIONS;

AUGERS; EXCITONS; PHONONS;

SEMICONDUCTING LEAD COMPOUNDS;

LEAD; LEAD SELENIDE; LEAD SULFIDE; QUANTUM DOT; SELENIUM DERIVATIVE; SULFIDE;

ARTICLE; CHEMISTRY; COMPARATIVE STUDY; ENERGY RESOURCE; PARTICLE SIZE; SURFACE PROPERTY;

ENERGY-GENERATING RESOURCES; LEAD; PARTICLE SIZE; QUANTUM DOTS; SELENIUM COMPOUNDS; SULFIDES; SURFACE PROPERTIES;

EID: 84856955200     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl203367m     Document Type: Article

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