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Physica B: Condensed Matter

Volumn 407, Issue 6, 2012, Pages 1020-1026

Sn 1-xBi xO 2 and Sn 1-xTa xO 2 (0≤x≤0.75): A first-principles study

(2) Ali, M A a Islam, A K M A a

a UNIVERSITY OF RAJSHAHI (Bangladesh)

Author keywords

Doped SnO 2; Electronic band structure; First principles; Mechanical properties; Optical properties

Indexed keywords

BI-DOPING; CONDUCTIVE OXIDES; DENSITY OF STATE; DIELECTRIC FUNCTIONS; DOPANT CONCENTRATIONS; DOPED SNO 2; DOPING CONCENTRATION; EFFECT OF DOPING; ELASTIC PARAMETERS; ELECTRONIC BAND STRUCTURE; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; POLARIZATION DIRECTION; POTENTIAL APPLICATIONS; PSEUDOPOTENTIAL PLANE-WAVE METHOD;

BAND STRUCTURE; CALCULATIONS; CONDUCTIVE MATERIALS; ELECTRONIC PROPERTIES; MECHANICAL PROPERTIES; OPTICAL PROPERTIES; REFRACTIVE INDEX; TIN;

BISMUTH COMPOUNDS;

EID: 84856739684 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2012.01.002 Document Type: Article

Times cited : (42)

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